Qasrawı, Atef Fayez HasanQasrawi, AFGasanly, NMDepartment of Electrical & Electronics Engineering2024-07-052024-07-052004280025-540810.1016/j.materresbull.2003.12.0182-s2.0-2942620901https://doi.org/10.1016/j.materresbull.2003.12.018https://hdl.handle.net/20.500.14411/1086Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686Systematic dark electrical conductivity and Hall mobility measurements have been carried out in the temperature range of 200-350 K on p-type TlGaSe2 crystals. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveals the extrinsic type of conduction with an acceptor impurity level located at 0.33 eV, and donor and acceptor concentrations of 9.0 x 10(15) and 1.3 x 10(16) cm(-3), respectively. A hole and electron effective masses of 0.520m(0) and 0.325m(0), respectively, with a donor to acceptor compensating ratio of 0.69 are also being identified. The Hall mobility is found to be limited by the hole-phonon short-range interactions scattering with a hole-phonon coupling constant of 0.17. (C) 2004 Elsevier Ltd. All rights reserved.eninfo:eu-repo/semantics/closedAccesssemiconductorsChalcogenideslayered compoundsdefectselectrical propertiesArticleQ239913531359WOS:000222362100020