Khusayfan, Najla M.Qasrawi, A. F.Khanfar, Hazem K.Department of Electrical & Electronics Engineering2024-07-052024-07-0520182211-379710.1016/j.rinp.2018.02.0172-s2.0-85044854169https://doi.org/10.1016/j.rinp.2018.02.017https://hdl.handle.net/20.500.14411/2689Qasrawi, Atef Fayez/0000-0001-8193-6975; Khanfar, Hazem k./0000-0002-3015-4049In the current work, the structural and electrical properties of the In4Se3/Ga2S3 interfaces are investigated. The X-ray analysis which concern the structural evolutions that is associated with the substrate type has shown that the hexagonal kappa-In2Se3 and the selenium (rhombohedral) rich orthorhombic In4Se3 phases of InSe are grown onto glass and gold substrates, respectively, at substrate of temperature of 300 degrees C in a vacuum media. The coating of the kappa-In2Se3 and of In4Se3 with amorphous layer of Ga2S3 is accompanied with uniform strain. The In4Se3/Ga2S3 interface is found to be of attractive quantum confinement features as it exhibited a conduction and valence band offsets of 0.20 and 1.86 eV, respectively. When the Au/In4Se3/Ga2S3 interface was contacted with carbon metallic point contact, it reveals a back to back Schottky hybrid device that behaves typically as metal-oxidesemiconductor field effect transition (MOSFET). The depletion capacitance analysis of this device revealed built in voltage values of 1.91 and 1.64 V at the Au and C sides, respectively. The designed MOSFET which is characterized in the frequency domain of 0.01-1.80 GHz is observed to exhibit, resonance-anti-resonance phenomena associated with negative capacitance effect in a wide domain of frequency that nominate it for applications in electronic circuits as parasitic capacitance minimizer, bus switching speed enhancer and low pass/high pass filter at microwave frequencies. (C) 2018 The Authors. Published by Elsevier B.V.eninfo:eu-repo/semantics/openAccessk-In2Se3Orthorhombic indium selenideDouble SchottkyImpedanceMOSFETArticleQ1812391244WOS:0004280277001699