Işık, MehmetIsik, M.Bulur, E.Gasanly, N. M.Department of Electrical & Electronics Engineering2024-07-052024-07-05201240925-838810.1016/j.jallcom.2012.08.0152-s2.0-84866133045https://doi.org/10.1016/j.jallcom.2012.08.015https://hdl.handle.net/20.500.14411/350Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Bulur, Enver/0000-0002-4000-7966Defect centers in Ga0.75In0.25Se single crystals have been studied performing the thermoluminescence measurements in the temperature range of 10-300 K. The observed glow curves were analyzed using curve fitting, initial rise, and different heating rate methods to determine the activation energies of the defect centers. Thermal cleaning process has been applied to decompose the overlapped curves. Four defect centers with activation energies of 9, 45,54 and 60 meV have been found as a result of the analysis. The capture cross sections and attempt-to-escape frequencies of the defect centers were also found using the curve fitting method under the light of theoretical predictions. The first order kinetics for the observed glow curve was revealed from the consistency between the theoretical predictions for slow retrapping and experimental results. Another indication of negligible retrapping was the independency of peak position from concentration of carriers trapped in defect levels. (C) 2012 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessSemiconductorsThermoluminescenceDefectsArticleQ1545153156WOS:000310818700027