Karadeniz, SedaYildiz, D. E.Karadeniz, S.Güllü, Hasan HüseyinGullu, H. H.Department of Basic English (Prep School)Department of Electrical & Electronics Engineering2024-07-052024-07-05202190957-45221573-482X10.1007/s10854-021-06480-72-s2.0-85110746328https://doi.org/10.1007/s10854-021-06480-7https://hdl.handle.net/20.500.14411/2021Yıldız, Dilber Esra/0000-0003-2212-199X;Y In this work, a metal-semiconductor diode in the form of Au/4H-SiC is fabricated, and the electrical properties of this device are systematically examined under dark and different illumination intensities. To perform this, the currentvoltage (I-V) characteristics of the Schottky-type diode are analyzed at room temperature. The performance parameters such as saturation current (I-0), barrier height (Phi(B)), ideality factor (n) and series resistance (R-s) are found to be illumination dependent. The reverse biased I - V characteristics under incident light indicate high photo-sensitivity as compared to the response at forward bias. Thus, this result is investigated in detail according to both Schottky and Poole-Frenkel effects. It is found that the Poole-Frenkel mechanism is dominant in the reverse biased region. The Au/4H-SiC Schottky junction has a strong photo-current response to the different illumination intensities and transient photocurrent characteristics of the fabricated device are studied at the illumination intensities of 50 and 100 mW/cm(2). All experimental results indicate that the Au/4H-SiC Schottky diode, with a valuable response to the illumination together with change in illumination intensity, can be used for optoelectronic applications.eninfo:eu-repo/semantics/closedAccess[No Keyword Available]ArticleQ232152013020138WOS:000673702600007