Yukselturk, EsraSurucu, OzgeTerlemezoglu, MakbuleParlak, MehmetAltindal, SemsettinElectrical-Electronics Engineering2024-07-052024-07-052021280957-45221573-482X10.1007/s10854-021-06378-42-s2.0-85112741046https://doi.org/10.1007/s10854-021-06378-4https://hdl.handle.net/20.500.14411/2031SURUCU, Özge/0000-0002-8478-1267; Yükseltürk, Esra/0000-0002-4527-6401; parlak, mehmet/0000-0001-9542-5121The illumination and voltage effects on the I-V measurements of the fabricated In/In2S3/p-Si photodiode were investigated in dark and under various illumination intensities (20-100 mW/cm(2)) between +/- 2 V. Two linear regions in the forward-bias ln(I)-V plots were observed. The value of diode ideality factor (n) had an increasing trend with increasing illumination intensity while the barrier height (phi(Bo)) had a decreasing trend due to the increase of photocurrent. The photodiode properties were also investigated, and the value of linear-dynamic value range (LDR) was found to be 20.56 dB. The photoresponse (I-ph/I-dark), the photoresponsivity (R), and specific detectivity (D*) of the photodiode were calculated as a function of the illumination. The open-circuit voltage (V-oc) and short-current (I-sc) were found to be 0.36 V and 2.87 mA under 100 mW.cm(-2) illumination intensity, respectively. The possible conduction mechanisms (CMs) were investigated using the forward ln(I)-V and reverse ln(I)-V-0.5 plots. The energy-dependent surface states (N-ss) profile was extracted from the positive I-V data by considering voltage-dependent barrier height (BH) and ideality factor (n) in dark and illumination at 100 mW/cm(2).eninfo:eu-repo/semantics/closedAccess[No Keyword Available]ArticleQ232172182521836WOS:000686477600001