Al Garni, S. E.Qasrawi, A. F.Department of Electrical & Electronics Engineering2024-07-052024-07-0520151862-63001862-631910.1002/pssa.2015320132-s2.0-84938989103https://doi.org/10.1002/pssa.201532013https://hdl.handle.net/20.500.14411/861Alqarni, Sabah Eid/0000-0002-4995-8231; Qasrawi, Atef Fayez/0000-0001-8193-6975In this work, a Ge/BN isotype electronic device that works as a selective microwave bandstop filter is designed and characterized. The interface is designed using a 50-m thick p-type BN on a 0.2-m thick p-type germanium thin film. The modeling of current-voltage characteristics of the Al/Ge/BN/C channel of the device revealed that the current is dominated by thermionic emission and by the tunneling of charged particles through energy barriers. The evaluation of the conduction parameters reflected a resonant circuit with a peak-to-valley current ratio of (PVCR) of 63 at a peak (V-p) and valley (V-v) voltages of 1.84 and 2.30V, respectively. The ac signal analysis of the Al/Ge/BN/C channel that was carried out in the frequency range of 1.0-3.0GHz displayed a bandstop filter properties with notch frequency (f(n)) of 2.04GHz and quality factor (Q) of 102. The replacement of the Al electrode by C through the C/Ge/BN/C channel caused the disappearance of the PVCR and shifted f(n) and Q to 2.70GHz and 100, respectively. The features of the Ge/BN device are promising as they indicate the applicability of these sensors in communication technology.eninfo:eu-repo/semantics/closedAccesscoatingdielectric propertiesenergy-band diagramsGeboron nitrideheterojunction devicesI-V characteristicsthin filmsArticleQ3Q3212818451850WOS:0003593824000316