Khanfar, H. K.Qasrawı, Atef Fayez HasanQasrawi, A. F.Department of Electrical & Electronics Engineering2024-07-052024-07-052015101369-80011873-408110.1016/j.mssp.2014.02.0152-s2.0-84915771868https://doi.org/10.1016/j.mssp.2014.02.015https://hdl.handle.net/20.500.14411/741Khanfar, Hazem k./0000-0002-3015-4049; Qasrawi, Atef Fayez/0000-0001-8193-6975A 100 mu m thick MgO film is used to design a metal semiconductor metal device. The device is characterized by means of current voltage characteristics in the dark and under various light energies in the photon energy range of 3.70-2.15 eV. A photovoltaic effect presented by an open circuit voltage of 0.12-0.47 V. short circuit current density of 3.9-10.5 mu A/cm(2), quantum efficiency of 0.662-0.052, and responsivity of 0.179-0.024 A/W under photoexcitation optical power of 2.2-28.2 mu W is observed. The device was also tested as a UV optical communication component. The test revealed a wide range of tunability and sensitivity for microwave resonant frequencies of 0.5 and 2.9 GHz. The differential resistance of the device exhibited different values at each applied ac signal frequency. When the frequency is fixed, the illuminated to the dark current ratio remained constant for all signal powers in the range of 0.00-20.0 dBm. (C) 2014 Elsevier Ltd. All rights reserved.eninfo:eu-repo/semantics/closedAccessSolar cellOpticalPhotodiodesMgOArticleQ2Q129183187WOS:000345645500023