Qasrawi,A.F.Gasanly,N.M.Department of Electrical & Electronics Engineering2024-10-062024-10-062002120232-130010.1002/1521-4079(200210)37:10<11042-s2.0-0036408717https://doi.org/10.1002/1521-4079(200210)37:10<1104https://hdl.handle.net/20.500.14411/9162The electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature-dependent Hall effect measurements revealed a carrier effective mass of 0.95 m0, a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities.eninfo:eu-repo/semantics/closedAccessAcousticInS crystalMobilityPolarResistivityScattering mechanismArticleQ3Q3371011041112