Delice, S.Işık, MehmetIsik, M.Bulur, E.Gasanly, N. M.Department of Electrical & Electronics Engineering2024-07-052024-07-05201340021-89791089-755010.1063/1.48071652-s2.0-84878420843https://doi.org/10.1063/1.4807165https://hdl.handle.net/20.500.14411/443Delice, Serdar/0000-0001-5409-6528; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Bulur, Enver/0000-0002-4000-7966The trap center(s) in Tl2Ga2S3Se single crystals has been investigated from thermoluminescence (TL) measurements in the temperature range of 10-300 K. Curve fitting, initial rise, and peak shape methods were applied to observed TL glow curve to evaluate the activation energy, capture cross section, and attempt-to-escape frequency of the trap center. One trapping center has been revealed with activation energy of 16 meV. Moreover, the characteristics of trap distribution have been studied using an experimental technique based on different illumination temperature. An increase of activation energy from 16 to 58 meV was revealed for the applied illumination temperature range of 10-25K. (C) 2013 AIP Publishing LLC.eninfo:eu-repo/semantics/closedAccess[No Keyword Available]ArticleQ211319WOS:000319295200018