Işık, MehmetGuler, I.Isik, M.Gasanly, N. M.Gasanova, L. G.Babayeva, R. F.Department of Electrical & Electronics Engineering2024-07-052024-07-052019120361-52351543-186X10.1007/s11664-019-07000-42-s2.0-85061192215https://doi.org/10.1007/s11664-019-07000-4https://hdl.handle.net/20.500.14411/3362Gasanly, Nizami/0000-0002-3199-6686; Babayeva, Rena Fikret/0000-0002-3170-0689; Gasanly, Nizami/0000-0002-3199-6686Optical and crystalline structure properties of Ga2Se3 crystals were analyzed utilizing ellipsometry and x-ray diffraction (XRD) experiments, respectively. Components of the complex dielectric function (epsilon=epsilon(1)+i epsilon(2)) and refractive index (N=n+ik) of Ga2Se3 crystals were spectrally plotted from ellipsometric measurements conducted from 1.2eV to 6.2eV at 300K. From the analyses of second-energy derivatives of epsilon(1) and epsilon(2), interband transition energies (critical points) were determined. Absorption coefficient-photon energy dependency allowed us to achieve a band gap energy of 2.02eV. Wemple and DiDomenico single effective oscillator and Spitzer-Fan models were accomplished and various optical parameters of the crystal were reported in the present work.eninfo:eu-repo/semantics/closedAccessSemiconductorsoptical propertiesoptical constantscritical pointsArticleQ348424182422WOS:000460453100083