Alharbi, S. R.Qasrawı, Atef Fayez HasanQasrawi, A. F.Department of Electrical & Electronics Engineering2024-07-052024-07-05201791567-17391878-167510.1016/j.cap.2017.03.0172-s2.0-85016950812https://doi.org/10.1016/j.cap.2017.03.017https://hdl.handle.net/20.500.14411/2869Qasrawi, Atef Fayez/0000-0001-8193-6975;In the current work, the structural, optical, dielectric and electrical properties of the Ga2S3 thin films which are deposited onto transparent thin Al, Yb and Au metal substrates are characterized by means of transmittance electron microscopy, X-ray diffraction, ultraviolet visible light spectroscopy and impedance spectroscopy techniques. The effects of the metallic substrates on the crystalline nature, energy band gap and dielectric spectra are also investigated. The modeling of the dielectric spectra allowed determining the effect of the Al, Yb and Au thin layers on the electron scattering time, the plasmon frequency, free electron density and drift mobility. In addition, a Yb/Ga2S3/Au Schottky barrier and All Ga2S3/Au back to back Schottky barrier devices (metal-semiconductor-metal (MSM) device) are fabricated and characterized by means of capacitance-voltage characteristics and capacitance and conductance spectra in the frequency range of 10-1800 MHz. While the Schottky barrier device displayed three distinct positions of resonance-antiresonance phenomena, the MSM device displayed one peak with narrow bandwidth of 10 MHz. The MSM devices exhibited an inversion, depletion and accumulation modes within a voltage range of 0.25 V width at 250 MHz. The study indicates the applicability of these device as smart capacitive switches, as Plasmon devices and as wavetraps. (C) 2017 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessGallium sulfideOptical materialsDielectric propertiesPlasmonVaractorArticleQ3Q2176835841WOS:000400717300002