Qasrawı, Atef Fayez HasanQasrawi, A. F.Gasanly, N. M.Department of Electrical & Electronics Engineering2024-07-052024-07-05200650925-838810.1016/j.jallcom.2006.02.0372-s2.0-33751017962https://doi.org/10.1016/j.jallcom.2006.02.037https://hdl.handle.net/20.500.14411/943Gasanly, Nizami/0000-0002-3199-6686; Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686Systematic dark electrical resistivity and Hall coefficient measurements have been carried out in the temperature range of 170-320 K on n-type In6S7 crystals. The analysis of the electrical resistivity and carrier concentration reveals the intrinsic type of conduction with an average energy band gap of similar to 0.75 eV The carrier effective masses of the conduction and valence bands were calculated from the intrinsic temperature-dependent carrier concentration data and were found to be 0.565m(0) and 2.020m(0), respectively. The temperature-dependent Hall mobility was observed to follow the mu alpha T-3/2 law and was analyzed assuming the domination of acoustic phonons scattering. The acoustic phonons scattering mobility was calculated from the crystal's structural data with no assumptions. The experimental Hall mobility data of In6S7 crystals coincides with the theoretical acoustic phonons scattering mobility data with acoustic deformation potential of 6.4 eV. (c) 2006 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccesssemiconductorscrystal growthX-ray diffractionelectronic transportArticleQ14261-26466WOS:000243085600012