Işık, MehmetIsik, M.Gasanly, N. M.Gasanova, L.Department of Electrical & Electronics Engineering2024-07-052024-07-05201880925-34671873-125210.1016/j.optmat.2018.09.0492-s2.0-85054205157https://doi.org/10.1016/j.optmat.2018.09.049https://hdl.handle.net/20.500.14411/2814Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686Ga2S3 single crystals were studied by x-ray diffraction (XRD), energy dispersive spectroscopy and spectroscopic ellipsometry measurements. XRD pattern of the sample is well-matched with reported hexagonal structure of beta-Ga2S3 . The spectra of real and imaginary parts of complex dielectric function (epsilon = epsilon(1) + epsilon(2)) and refractive index (N = n + ik) were plotted in the 1.2-6.2 eV range according to results of ellipsometric data. The e 2 -spectrum and analyses of absorption coefficient pointed out that studied sample has band gap energy of 2.48 eV which is consistent with that of beta-Ga(2)S(3)2. Critical point energies of beta-Ga2S3 were also reported in the present study.eninfo:eu-repo/semantics/closedAccessEllipsometryGa2S3Optical propertiesArticleQ2869599WOS:000453499500015