Isik, M.Işık, MehmetNasser, H.Ahmedova, F.Guseinov, A.Gasanly, N. M.Department of Electrical & Electronics Engineering2024-07-052024-07-05201830030-40261618-133610.1016/j.ijleo.2018.06.0562-s2.0-85048391831https://doi.org/10.1016/j.ijleo.2018.06.056https://hdl.handle.net/20.500.14411/2958Gasanly, Nizami/0000-0002-3199-6686; Nasser, Hisham/0000-0001-5122-001X; Gasanly, Nizami/0000-0002-3199-6686Cu3In5S9 single crystals were investigated by structural methods of x-ray diffraction and energy dispersive spectroscopy and optical techniques of ellipsometry and reflection carried out at room temperature. The spectral dependencies of optical constants; dielectric function, refractive index and extinction coefficient, were plotted in the range of 1.2-6.2 eV from ellipsometric data. The spectra of optical constants obtained from ellipsometry analyses and reflectance spectra presented a sharp change around 1.55 and 1.50 eV, respectively, which are associated with band gap energy of the crystal. The critical point (interband transition) energies were also found from the analyses of second-energy derivative of real and imaginary components of dielectric function. The analyses indicated the presence of four critical points at 2.73, 135, 4.04 and 4.98 eV.eninfo:eu-repo/semantics/closedAccessEllipsometryOptical propertiesSemiconductorsArticleQ21717782WOS:000444660700011