Khanfar, Hazem K.Qasrawi, Atef A.Department of Electrical & Electronics Engineering2024-07-052024-07-0520161687-563X1687-564810.1155/2016/71823032-s2.0-84986216141https://doi.org/10.1155/2016/7182303https://hdl.handle.net/20.500.14411/541Qasrawi, Atef Fayez/0000-0001-8193-6975; Khanfar, Hazem k./0000-0002-3015-4049The light polarization effects on the optical reflective and dielectric spectra of GaSe thin films are studied in the incident light wavelength range of 200-1100 nm. In this range of measurement, the angle of incidence (theta(i)) of light was varied between 30 degrees and 80 degrees. In addition, at theta(i) of 30 degrees the light polarizing angle (delta) was altered in the range of 0-90 degrees. Regardless of the value of lambda, for all theta(i) > 65 degrees, the total reflectance sharply decreased with increasing theta(i). In addition, when theta(i) is fixed at 30 and delta was varied, the amplitudes ratio of the polarized waves exhibits a resonance-antiresonance phenomenon at a wavelength that coincides with the film's thickness (800 nm). This behavior was assigned to the coupled interference between incident and reflected waves and to the strong absorption effects. Two main resonance peaks are observed as response to s-polarized and normal incident beam: one is at similar to 540 (556 nm) and the other at similar to 420 THz (714 nm). The dielectric constant of the GaSe films exhibits anisotropic characteristics that nominate it for use as multipurpose optoelectronic devices.eninfo:eu-repo/semantics/openAccess[No Keyword Available]Article2016WOS:0003817588000010