Qasrawi, A. F.Sahin, Ethem IlhanAbed, Tamara Y.Emek, MehribanDepartment of Electrical & Electronics Engineering2024-07-052024-07-0520210370-19721521-395110.1002/pssb.2020004192-s2.0-85093683388https://doi.org/10.1002/pssb.202000419https://hdl.handle.net/20.500.14411/3180Qasrawi, Atef Fayez/0000-0001-8193-6975; Şahin, Ethem ilhan/0000-0001-7859-9066Herein, lanthanum doping effects on the structural, dielectric, and electrical properties of Ba1-xLax(Zn1/3Nb2/3)O-3 (BZN) solid solutions are focused upon. The La contents which are varied in the range of 0.02-0.20 exhibit a solubility limit of x = 0.02. Although minor phases of Ba5Nb4O15 and Ba3LaNb3O12 appear for samples doped with La contents of x = 0.05 and x = 0.10, they play no remarkable role for the enhanced structural and dielectric properties of BZN. The La doping content of x = 0.02 succeeds in increasing the crystallite size by 51.16% and lowering the microstrain by 34.18% and defect concentration by 63.10%. La-doped BZN ceramics display higher values of relative density and electrical conductivity. The analyses of the dielectric spectra as a function of temperature display dielectric relaxation behavior above 120 degrees C. In the temperature range of 20-120 degrees C, La doping changes the temperature coefficient of dielectric constants from +30 ppm degrees C-1 in pure samples to -341 ppm degrees C-1 in samples doped with La contents of x = 0.10. The enhancements in structural parameters, density values, and dielectric responses that are achieved via La doping make BZN ceramics more suitable for electronic device fabrication.eninfo:eu-repo/semantics/closedAccessBa1-xLax(Zn1/3Nb2/3)O-3dielectric ceramicsdielectric relaxationX-ray diffractionArticle2583WOS:0005831856000013