Işık, MehmetIsik, M.Gasanly, N. M.Turan, R.Department of Electrical & Electronics Engineering2024-07-052024-07-052013100921-45261873-213510.1016/j.physb.2012.09.0512-s2.0-84870051005https://doi.org/10.1016/j.physb.2012.09.051https://hdl.handle.net/20.500.14411/346Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686;Spectroscopic ellipsometry measurements on the GaS single crystals are presented in the energy range of 1.2 - 6.2 eV at room temperature. Optical constants; pseudorefractive index, pseudoextinction coefficient, real and imaginary parts of the pseudodielectric function were determined. Analysis of the second derivative of real and imaginary parts of the pseudodielectric constant revealed five transitions with critical point energies of 3.95, 4.22, 4.51, 4.75 and 5.50 eV. These energies were assigned to interband transitions according to theoretical study of GaS band structure available in literature. (C) 2012 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessSemiconductorsEllipsometryPseudorefractive indexArticle4084345WOS:000313349700009