Qasrawi, Atef F.Qasrawı, Atef Fayez HasanGasanly, N. M.Department of Electrical & Electronics Engineering2024-07-052024-07-05201570018-93831557-964610.1109/TED.2014.23658312-s2.0-84920149228https://doi.org/10.1109/TED.2014.2365831https://hdl.handle.net/20.500.14411/728Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686A p-n heterojunction made of MgO and Ga4Se3S single crystal has been successfully produced. The current-voltage curve analysis has shown that the current conduction mechanism is mostly governed by the Richardson-Schottky mechanism. The width of the effective interface region of the p-n junction was found to be 3.72x10(-5)cm. The work function and the electron affinity of the Ga4Se3S crystals were also determined as 4.32 and 3.96 eV, respectively. On the other hand, the capacitance-voltage curve analysis, which was carried out in the power range that extends from Bluetooth to WLAN power outputs, reflected a built-in voltage of 0.48 eV and density of noncompensated carriers of 8.2 x 10(16)cm(-3). The device is observed to exhibit a wide range of negative resistance associated with the tunneling of charged particles at reverse biasing down to similar to 1.28 V. At that voltage, when exposed to a He-Ne laser beam of similar to 3 mW, the device reflected a responsivity of similar to 80. The charge storability increased and the I-V characteristics are significantly shifted. These properties are promising because it indicates the applicability of these tunneling devices in optoelectronics.eninfo:eu-repo/semantics/closedAccessCommunication equipment testingcurrent measurementsemiconductor heterojunctionsArticleQ2621102106WOS:000346979800015