Muneer, SadidScoggin, JakeDirisaglik, FarukAdnane, LhaceneCywar, AdamBakan, GokhanGokirmak, AliDepartment of Electrical & Electronics Engineering2024-07-052024-07-052018102158-322610.1063/1.50350852-s2.0-85048631194https://doi.org/10.1063/1.5035085https://hdl.handle.net/20.500.14411/2708Silva, Helena/0000-0001-6356-5402; Scogin, Jake/0000-0003-4465-7701; Adnane, Lhacene/0000-0002-7925-4534; Gokirmak, Ali/0000-0001-5940-899X; Muneer, Sadid/0000-0002-4166-2807; Bakan, Gokhan/0000-0001-8335-2439Resistivity of metastable amorphous Ge2Sb2Te5 (GST) measured at device level show an exponential decline with temperature matching with the steady-state thin-film resistivity measured at 858 K (melting temperature). This suggests that the free carrier activation mechanisms form a continuum in a large temperature scale (300 K - 858 K) and the metastable amorphous phase can be treated as a supercooled liquid. The effective activation energy calculated using the resistivity versus temperature data follow a parabolic behavior, with a room temperature value of 333 meV, peaking to similar to 377 meV at similar to 465 K and reaching zero at similar to 930 K, using a reference activation energy of 111 meV (3k(B)T/2) at melt. Amorphous GST is expected to behave as a p-type semiconductor at T-melt similar to 858 K and transitions from the semiconducting-liquid phase to the metallic-liquid phase at similar to 930 K at equilibrium. The simultaneous Seebeck (S) and resistivity versus temperature measurements of amorphous-fcc mixed-phase GST thin-films show linear S-T trends that meet S = 0 at 0 K, consistent with degenerate semiconductors, and the dS/dT and room temperature activation energy show a linear correlation. The single-crystal fcc is calculated to have dS/dT = 0.153 mu V/K-2 for an activation energy of zero and a Fermi level 0.16 eV below the valance band edge. (C) 2018 Author(s).eninfo:eu-repo/semantics/openAccess[No Keyword Available]ArticleQ4Q286WOS:000436855300087