Işık, MehmetIsik, M.Gasanly, N. M.Korkmaz, F.Department of Electrical & Electronics Engineering2024-07-052024-07-05201300921-452610.1016/j.physb.2012.12.0172-s2.0-84873346543https://doi.org/10.1016/j.physb.2012.12.017https://hdl.handle.net/20.500.14411/458Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Korkmaz, Filiz/0000-0003-3512-3521;The infrared reflectivity and transmittance and Raman scattering in Ga3InSe4 layered crystals were investigated in the frequency ranges of 100-400, 400-4000 and 25-500 cm(-1). The refractive and absorption indices, the frequencies of transverse and longitudinal optical modes, high- and low-frequency dielectric constants were obtained from the analysis of the IR reflectivity spectra. The bands observed in IR transmittance spectra were interpreted in terms of two-phonon absorption processes. (C) 2012 Elsevier B.V. All rights reserved.eninfo:eu-repo/semantics/closedAccessSemiconductorsChalcogenidesOptical propertiesRaman scatteringArticle4126163WOS:000314764900012