Effect of Thallium (tl) Substitution for Indium (in) on Ellipsometric Characteristics of Tlinse<sub>2</Sub> Single Crystals
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Date
2021
Authors
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier Sci Ltd
Open Access Color
Green Open Access
No
OpenAIRE Downloads
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Publicly Funded
No
Abstract
TlMeSe2 (Me: Tl, In) semiconducting compounds exhibiting chain structure have been attractive ternary materials in various technological devices. In the TlMeSe2 structure, Tl1+ is monovalent while Me3+ is trivalent ions. The present paper reports the results of spectroscopic ellipsometry measurements performed on Tl1+(Tl0.2In0.8)3+Se2 (abbreviated as Tl1.2In0.8Se2) single crystals which were grown by substituting thallium for indium. The measurements were performed for orientations of E//c and Etc (E: electric field and c: optical axis). The analyses of ellipsometry data considering air-sample optical model presented the spectral dependencies of dielectric function, refractive index and extinction coefficient in the 1.2-5.0 eV range. Critical point energies of studied single crystal were obtained by fitting second-energy derivative spectra of dielectric function. The determined energies were compared with those of TlInSe2 to understand the effect of thalliumindium substitution in the compound. The crystal structure and atomic compositions of the constituent elements were also reported throughout the paper.
Description
Gasanly, Nizami/0000-0002-3199-6686; Isik, Mehmet/0000-0003-2119-8266
Keywords
TlInSe2, Ellipsometry, Critical points, Optical properties
Fields of Science
0103 physical sciences, 02 engineering and technology, 0210 nano-technology, 01 natural sciences
Citation
WoS Q
Q2
Scopus Q
Q1

OpenCitations Citation Count
7
Source
Materials Science in Semiconductor Processing
Volume
134
Issue
Start Page
106005
End Page
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Citations
CrossRef : 8
Scopus : 7
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Mendeley Readers : 4
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