Thermal lattice scattering mobility and carrier effective mass in intrinsic Tl<sub>2</sub>InGaTe<sub>4</sub> single crystals

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2007

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Iop Publishing Ltd

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Systematic structural, dark electrical resistivity and Hall coefficient measurements have been carried out on n- type Tl2InGaTe4 single crystals. The data from x- ray powder diffraction allowed determination of the tetragonal unit cell lattice parameters. Analysis of the electrical resistivity and carrier concentration, which was recorded in the temperature range 210 - 350 K, reveals the intrinsic type of conduction with an average energy band gap of 0.85 eV. The temperature- dependent Hall mobility was observed to follow the mu alpha T-3/2 law and was analysed assuming the domination of acoustic phonons scattering. The experimental Hall mobility data for Tl2InGaTe4 crystals agrees with the theoretical acoustic phonon scattering mobility data with an acoustic deformation potential of 7.6 eV.

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Qasrawi, Atef Fayez/0000-0001-8193-6975; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686
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Qasrawi, Atef Fayez ORCID logo
Gasanly, Nizami ORCID logo
Gasanly, Nizami ORCID logo

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19

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15

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https://doi.org/10.1088/0953-8984/19/15/156206
 https://hdl.handle.net/20.500.14411/954

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