Compositional Dependence of Optical Modes Frequencies in T1ga<i><sub>x</Sub>< Layered Mixed Crystals (0 ≤ <i>x</I> ≤ 1)

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Date

2014

Authors

Isik, M.
Işık, Mehmet
Gasanly, N. M.
Korkmaz, F.

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Polish Acad Sciences inst Physics

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

The infrared transmittance and Raman scattering spectra in TlGaxIn1-xS2 (0 <= x <= 1) layered mixed crystals grown by the Bridgman method were studied in the frequency ranges of 400-2000 and 250-400 cm(-1), respectively. The bands observed at room temperature in IR transmittance spectra of TlGaxIn1-xS2 were interpreted in terms of multiphonon absorption processes. The dependences of the frequencies of IR- and Raman-active modes on the composition of TlGaxIn1-xS2 mixed crystals were also established. The structural characterization of the mixed crystals was investigated by means of X-ray diffraction measurements and compositional dependence of lattice parameters was revealed.

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Korkmaz, Filiz/0000-0003-3512-3521; Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686;
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Korkmaz, Filiz ORCID logo
Gasanly, Nizami ORCID logo
Gasanly, Nizami ORCID logo

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0

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Q4

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Volume

126

Issue

3

Start Page

747

End Page

750

URI

https://doi.org/10.12693/APhysPolA.126.747
 https://hdl.handle.net/20.500.14411/150

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