Optical Parameters of Anisotropic Chain-Structured Tl<sub>2</Sub>ingate<sub>4< Crystals by Spectroscopic Ellipsometry

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2016

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Elsevier Gmbh

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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Abstract

Spectroscopic ellipsometry measurements were performed on Tl2InGaTe4 single crystals in the 1.2-6.2 eV range for orientations of electric field, parallel (E//c) and perpendicular (E perpendicular to c) to optic axis c. Spectral dependence of optical parameters; real and imaginary components of the dielectric function, refractive index and extinction coefficient were obtained from the analyses of experimental data using an ambient-substrate optical model. The analysis of the absorption data calculated using the extinction coefficient showed the existence of indirect transitions in the crystal with an energy band gap of similar to 0.72 eV for both orientations. Interband transition (critical point) energies were revealed using second-energy derivative spectra of the dielectric function. The results showed the presence of five each interband transition structures for E//c and E perpendicular to c orientations. (C) 2016 Elsevier GmbH. All rights reserved.

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Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686

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Semiconductors, Ellipsometry, Optical parameters

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Q2

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Volume

127

Issue

22

Start Page

10637

End Page

10642

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