Temperature-dependent band gap characteristics of Bi<sub>12</sub>SiO<sub>20</sub> single crystals

dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridDelice, Serdar/0000-0001-5409-6528
dc.authoridGasanly, Nizami/0000-0002-3199-6686
dc.authoridIsik, Mehmet/0000-0003-2119-8266
dc.authorscopusid23766993100
dc.authorscopusid55751932500
dc.authorscopusid35580905900
dc.authorscopusid6508352480
dc.authorscopusid6602255913
dc.authorwosidGasanly, Nizami/HRE-1447-2023
dc.authorwosidIsik, Mehmet/KMY-5305-2024
dc.authorwosidDelice, Serdar/AAU-4793-2020
dc.authorwosidGasanly, Nizami/ABA-2249-2020
dc.contributor.authorIşık, Mehmet
dc.contributor.authorDelice, S.
dc.contributor.authorGasanly, N. M.
dc.contributor.authorDarvishov, N. H.
dc.contributor.authorBagiev, V. E.
dc.contributor.otherDepartment of Electrical & Electronics Engineering
dc.date.accessioned2024-07-05T15:41:51Z
dc.date.available2024-07-05T15:41:51Z
dc.date.issued2019
dc.departmentAtılım Universityen_US
dc.department-temp[Isik, M.] Atilim Univ, Dept Elect & Elect Engn, TR-06836 Ankara, Turkey; [Delice, S.] Hitit Univ, Dept Phys, TR-19040 Corum, Turkey; [Gasanly, N. M.] Middle East Tech Univ, Dept Phys, TR-06800 Ankara, Turkey; [Gasanly, N. M.] Baku State Univ, Virtual Int Sci Res Ctr, Baku 1148, Azerbaijan; [Darvishov, N. H.; Bagiev, V. E.] Baku State Univ, Inst Phys Problems, Baku 1148, Azerbaijanen_US
dc.descriptionGasanly, Nizami/0000-0002-3199-6686; Delice, Serdar/0000-0001-5409-6528; Gasanly, Nizami/0000-0002-3199-6686; Isik, Mehmet/0000-0003-2119-8266en_US
dc.description.abstractBi12SiO20 single crystals have attracted interest due to their remarkable photorefractive characteristics. Since bandgap and refractive index are related theoretically to each other, it takes much attention to investigate temperature dependency of bandgap energy to understand the behavior of photorefractive crystals. The present study aims at investigating structural and optical characteristics of photorefractive Bi12SiO20 single crystals grown by the Czochralski method. The structural characterization methods indicated that atomic composition ratios of constituent elements were well-matched with the chemical compound Bi12SiO20, and grown crystals have a cubic crystalline structure. Optical properties of crystals were investigated by room temperature Raman spectroscopy and temperature-dependent transmission measurements between 10 and 300 K. The analyses of transmittance spectra by absorption coefficient and derivative spectrophotometry techniques resulted in energy bandgaps decreasing from 2.61 to 2.48 eV and 2.64 to 2.53 eV as temperature was increased from 10 to 300 K. The Varshni model was applied to analyze temperature-bandgap energy dependency.en_US
dc.identifier.citation16
dc.identifier.doi10.1063/1.5129019
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issue24en_US
dc.identifier.scopus2-s2.0-85077400821
dc.identifier.urihttps://doi.org/10.1063/1.5129019
dc.identifier.urihttps://hdl.handle.net/20.500.14411/3509
dc.identifier.volume126en_US
dc.identifier.wosWOS:000505538100025
dc.identifier.wosqualityQ2
dc.language.isoenen_US
dc.publisherAmer inst Physicsen_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.subject[No Keyword Available]en_US
dc.titleTemperature-dependent band gap characteristics of Bi<sub>12</sub>SiO<sub>20</sub> single crystalsen_US
dc.typeArticleen_US
dspace.entity.typePublication
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