Frequency Effect on Electrical and Dielectric Characteristics in InSe-Interlayered MOS Device

Abstract

In current study, the electrical and dielectric properties of the metal/oxide/semiconductor (MOS) structure formed with an InSe thin film layer grown by thermal evaporation were investigated over the voltage range of +/- 4 V and frequency range of 1 kHz to 1 MHz. Admittance analysis Y = G + jwC was performed for electrical measurements. Dielectric parameters were derived from the electrical measurement results. The density of states/traps were calculated employing both the Hill-Coleman and low-high frequency capacitance (C-LF-C-HF) methods is consistent with each other, and its decrease with increasing frequency is a result of the surface passivation effect. The series resistance reduces with increasing frequency. Dielectric constant and loss decrease with increasing frequency due to the effect of different polarization mechanisms. oacis independent of frequency in the low frequency region but exhibits a linear increase at high frequency region. The results obtained highlight that the fabricated MOS structure shows potential for storage devices, which are an integral part of electronic circuits and applications.