Spectroscopic ellipsometry investigation of optical properties of β-Ga₂S₃ single crystals

Abstract

Ga2S3 single crystals were studied by x-ray diffraction (XRD), energy dispersive spectroscopy and spectroscopic ellipsometry measurements. XRD pattern of the sample is well-matched with reported hexagonal structure of beta-Ga2S3 . The spectra of real and imaginary parts of complex dielectric function (epsilon = epsilon(1) + epsilon(2)) and refractive index (N = n + ik) were plotted in the 1.2-6.2 eV range according to results of ellipsometric data. The e 2 -spectrum and analyses of absorption coefficient pointed out that studied sample has band gap energy of 2.48 eV which is consistent with that of beta-Ga(2)S(3)2. Critical point energies of beta-Ga2S3 were also reported in the present study.