Infrared and Raman Scattering Spectra of Layered Structured Ga<sub>3</Sub>inse<sub>4< Crystals

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2013

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Elsevier Science Bv

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Department of Electrical & Electronics Engineering
Department of Electrical and Electronics Engineering (EE) offers solid graduate education and research program. Our Department is known for its student-centered and practice-oriented education. We are devoted to provide an exceptional educational experience to our students and prepare them for the highest personal and professional accomplishments. The advanced teaching and research laboratories are designed to educate the future workforce and meet the challenges of current technologies. The faculty's research activities are high voltage, electrical machinery, power systems, signal and image processing and photonics. Our students have exciting opportunities to participate in our department's research projects as well as in various activities sponsored by TUBİTAK, and other professional societies. European Remote Radio Laboratory project, which provides internet-access to our laboratories, has been accomplished under the leadership of our department with contributions from several European institutions.

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The infrared reflectivity and transmittance and Raman scattering in Ga3InSe4 layered crystals were investigated in the frequency ranges of 100-400, 400-4000 and 25-500 cm(-1). The refractive and absorption indices, the frequencies of transverse and longitudinal optical modes, high- and low-frequency dielectric constants were obtained from the analysis of the IR reflectivity spectra. The bands observed in IR transmittance spectra were interpreted in terms of two-phonon absorption processes. (C) 2012 Elsevier B.V. All rights reserved.

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Gasanly, Nizami/0000-0002-3199-6686; Gasanly, Nizami/0000-0002-3199-6686; Korkmaz, Filiz/0000-0003-3512-3521;
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Gasanly, Nizami ORCID logo
Gasanly, Nizami ORCID logo
Korkmaz, Filiz ORCID logo

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Semiconductors, Chalcogenides, Optical properties, Raman scattering

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412

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61

End Page

63

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https://doi.org/10.1016/j.physb.2012.12.017
 https://hdl.handle.net/20.500.14411/458

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