This item is non-discoverable
Karaman, Mehmet
Loading...
Name Variants
K., Mehmet
Karaman, Mehmet
M.,Karaman
Mehmet, Karaman
M., Karaman
K.,Mehmet
Karaman,M.
Karaman, M.
Karaman, Mehmet
M.,Karaman
Mehmet, Karaman
M., Karaman
K.,Mehmet
Karaman,M.
Karaman, M.
Job Title
Araştırma Görevlisi
Email Address
Main Affiliation
Physics Group
Status
Former Staff
Website
ORCID ID
Scopus Author ID
Turkish CoHE Profile ID
Google Scholar ID
WoS Researcher ID
Sustainable Development Goals
7
AFFORDABLE AND CLEAN ENERGY
1
Research Products
Scholarly Output
3
Articles
3
Citation Count
56
Supervised Theses
0
3 results
Scholarly Output Search Results
Now showing 1 - 3 of 3
Article Citation - WoS: 50Citation - Scopus: 51Forward and Reverse Bias Current-Voltage Characteristics of Au/N-si Schottky Barrier Diodes With and Without Sno2 Insulator Layer(Elsevier, 2011) Gokcen, M.; Altindal, S.; Karaman, M.; Aydemir, U.; Chemical Engineering; Physics GroupThe effects of interfacial insulator layer, interface states (N-ss) and series resistance (R-s) on the electrical characteristics of Au/n-Si structures have been investigated using forward and reverse bias current-voltage (I-V) characteristics at room temperature. Therefore, Au/n-Si Schottky barrier diodes (SBDs) were fabricated as SBDs with and without insulator SnO2 layer to explain the effect of insulator layer on main electrical parameters. The values of ideality factor (n), R-s and barrier height (Phi(Bo)) were calculated from ln(I) vs. V plots and Cheung methods. The energy density distribution profile of the interface states was obtained from the forward bias I-V data by taking bias dependence of ideality factor, effective barrier height (Phi(e)) and R-s into account for MS and MIS SBDs. It was found that N-ss values increase from at about mid-gap energy of Si to bottom of conductance band edge of both SBDs and the MIS SBD's N-ss values are 5-10 times lower than those of MS SBD's. An apparent exponential increase from the mid-gap towards the bottom of conductance band is observed for both SBDs' (MS and MIS) interface states obtained without taking R-s into account. (C) 2011 Elsevier B.V. All rights reserved.Article Syntactic Scrambling in Broca’s Aphasia: a Turkish Sample(S. Karger AG, 2025) Arslan, B.; Çiyiltepe, M.M.; Karaman, M.; Physics GroupIntroduction: Broca’s aphasia (BA) is a language disorder that causes grammatical errors in the language production skills of patients. Contemporary studies revealed the fact that patients with BA (PBA) also have difficulty in analyzing the meaning of phrases and sentences and comprehending the real meaning of the discourse produced by the speaker. The purpose of this study was to investigate possible effect of syntactic movement by changing the word positions in the sentence with morphological markers in order to produce clauses without changing the meaning on the phrasal comprehension skills of Turkish-speaking patients with BA. Method: A total of 300 participants were divided as study (n = 150) and control (n = 150) groups between ages of 27–89. A test that included 20 relative clauses and 9 noun clauses (in total 29 phrases) was assigned to the PBA and the control group (CG). Relative clause phrases originated from simple sentences by adding suffixes to the verb as a function of Turkish morphology. Each suffix indicated a specific noun, object, or subject, and each figure in the test was related to one of them. A researcher asked participants to match the demanded clause with the 6 possibly related pictures for relative clause and 3 for noun clauses. Results: Findings indicated that BA patients in our study had a lack of comprehending relative clauses due to the syntactic movement of words in the object and subject positions. Compared to the responses of the CG, PBA had significantly lower scores when the object and subject positions have moved from their original positions. BA patients also obtained significantly lower scores in object type questions. Conclusion: Our findings support the fact that comprehension processing in PBA should be investigated profoundly to be able to understand the nature of the disorder in different languages. In Turkish, syntactic movement of words to form a relative clause caused the BA patients to have significant problems to assign the semantic roles to the words in the existence of movement or change in their original positions. © 2025 S. Karger AG, Basel.Article Citation - WoS: 10Citation - Scopus: 12Low Temperature Crystallization of Amorphous Silicon by Gold Nanoparticle(Elsevier, 2013) Karaman, M.; Aydin, M.; Sedani, S. H.; Erturk, K.; Turan, R.; Department of Basic English (Prep School); Physics GroupSingle crystalline Si thin film fabricated on glass substrate by a process called Solid Phase Crystallization (SPC) is highly desirable for the development of high efficiency and low cost thin film solar cells. However, the use of ordinary soda lime glass requires process temperatures higher than 600 degrees C. Crystallization of Si film at around this temperature takes place in extremely long time exceeding 20 h in most cases. In order to reduce this long process time, new crystallization techniques such as Metal Induced Crystallization (MIC) using thin metal films as a catalyst layer is attracting much attention. Instead of using continuous metal films, the use of metal nanoparticles offers some advantages. In this work, gold thin films were deposited on aluminum doped zinc oxide (AZO) coated glass and then annealed for nanoparticle formation. Amorphous silicon was then deposited by e-beam evaporation onto metal nanoparticles. Silicon films were annealed for crystallization at different temperatures between 500 degrees C and 600 degrees C. We showed that the crystallization occurs at lower temperatures and with higher rates with the inclusion of gold nanoparticles (AuNP). Raman and XRD results indicate that the crystallization starts at temperatures as low as 500 degrees C and an annealing at 600 degrees C for a short process time provides sufficiently good crystallinity. (c) 2013 Elsevier B.V. All rights reserved.
