Browsing by Author "Sürücü, Özge"

Now showing 1 - 20 of 38

Citation Count: 20
Anisotropic mechanical properties of Tl₄Ag₁₈Te₁₁ compound with low thermal conductivity
(Academic Press inc Elsevier Science, 2020) Gencer, Aysenur; Surucu, Ozge; Surucu, Gokhan; Deligoz, Engin; Electrical-Electronics Engineering
The anisotropic mechanical properties of Tl4Ag18Te11 compound was investigated elaborately for the first time by using Density Functional Theory calculations with the Vienna Ab-initio Simulation Package in this work. Tl4Ag18Te11 compound was optimized in the I4mm space group and the formation energy was determined as a negative value that is the indication of the experimental synthesizability of this compound. The optimized crystal structure was employed for the calculations of the elastic constants and the obtained values revealed the mechanical stability of Tl4Ag18Te11 compound. The polycrystalline properties were determined such as shear modulus, Poisson's ratio, etc. In addition, the anisotropic elastic properties were presented. The direction dependent sound waves velocities, polarization of the sound waves, enhancement factor and the power flow angle were determined. The thermal conductivity studies were performed and the minimum thermal conductivity (0.259 W m(-1)K(-1)) and the diffusion thermal conductivity (0.202 W m(-1)K(-1)) were calculated. This study illustrates the capability of this compound for the thermoelectric materials.
Citation Count: 4
Complex nodal structure phonons formed by open and closed nodal lines in CoAsS and Na₂CuP solids
(Royal Soc Chemistry, 2022) Ding, Guangqian; Sun, Tingting; Surucu, Gokhan; Surucu, Ozge; Gencer, Aysenur; Wang, Xiaotian; Electrical-Electronics Engineering
Topological phononic states with nodal lines not only have updated our knowledge of the phases of matter in a fundamental way, but also have become a major frontier research direction in condensed matter physics. From a mathematical perspective, nodal line phonons can be divided into open and closed types. The present attempt is a report on the coexistence of such open and closed nodal line phonons in two realistic solids, CoAsS and Na2CuP, based on first-principles calculations. Furthermore, it is shown that the closed and the open nodal line states in CoAsS and Na2CuP have touching points and can form a complex nodal structure phonon in a momentum space. Due to the topologically non-trivial behavior of the complex nodal structure in both phonons, evident phononic surface states occur in the projected surfaces of both materials. In this way, these states, arising from the projected crossing points, can benefit experimental detection in follow-up studies. It has been stated that the open and closed nodal line states are formed by the crossings of two phonon branches and, hence, these two types of nodal line phonons are coupled with each other. The results obtained here could be considered as a breakthrough in clearly demonstrating the coexistence of the open and closed nodal line states in phonons and, for this reason, may inspire researchers seeking materials with such topological states in other bosons, such as photons.
Citation Count: 6
Construction of self-assembled vertical nanoflakes on CZTSSe thin films
(Iop Publishing Ltd, 2019) Terlemezoglu, M.; Surucu, O. Bayrakli; Colakoglu, T.; Abak, M. K.; Gullu, H. H.; Ercelebi, C.; Parlak, M.; Electrical-Electronics Engineering; Department of Electrical & Electronics Engineering
Cu2ZnSn(S, Se)(4) (CZTSSe) is a promising alternative absorber material to achieve high power conversion efficiencies, besides its property of involving low-cost and earth-abundant elements when compared to Cu(In, Ga) Se-2 (CIGS) and cadmium telluride (CdTe), to be used in solar cell technology. In this study, a novel fabrication technique was developed by utilizing RF sputtering deposition of CZTSSe thin films having a surface decorated with self-assembled nanoflakes. The formation of nanoflakes was investigated by detailed spectroscopic method of analysis in the effect of each stacked layer deposition in an optimized sequence and the size of nanoflakes by an accurate control of sputtering process including film thickness. Moreover, the effects of substrate temperature on the formation of nanoflakes on the film surface were discussed at a fixed deposition route. One of the main advantages arising from the film surface with self-assembled nanoflakes is the efficient light trapping which decreases the surface reflectance. As a result of the detailed production and characterization studies, it was observed that there was a possibility of repeatable and controllable fabrication sequence for the preparation of CZTSSe thin films with self-textured surfaces yielding low surface reflectance.
Citation Count: 9
CZTSSe thin films fabricated by single step deposition for superstrate solar cell applications
(Springer, 2019) Terlemezoglu, M.; Surucu, O. Bayrakli; Dogru, C.; Gullu, H. H.; Ciftpinar, E. H.; Ercelebi, C.; Parlak, M.; Electrical-Electronics Engineering; Department of Electrical & Electronics Engineering
The focus of this study is the characterization of Cu2ZnSn(S,Se)(4) (CZTSSe) thin films and fabrication of CZTSSe solar cell in superstrate configuration. In this work, superstrate-type configuration of glass/ITO/CdS/CZTSSe/Au was entirely fabricated by totally vacuum-based process. CZTSSe absorber layers were grown by RF magnetron sputtering technique using stacked layer procedure. SnS, CuSe and ZnSe solid targets were used as precursors and no additional step like the selenization process was applied. The structural and morphological properties of deposited CZTSSe layers were analyzed using X-ray diffraction (XRD), Raman scattering, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy analysis (EDS) measurements. The optical and electrical properties of the CZTSSe thin films were investigated by UV-Vis spectroscopy, Hall-Effect and photoconductivity measurements. In addition, the device performance of the fabricated superstrate solar cell was examined.
Citation Count: 1
Deposition and Characterization of ZnSnSe₂ Thin-Films Deposited by Using Sintered Stoichiometric Powder
(Gazi Univ, 2019) Bayrakli Surucu, Ozge; Gullu, Hasan Huseyin; Electrical-Electronics Engineering; Department of Electrical & Electronics Engineering
In this work, ZnSnSe2 (ZTSe) thin films were deposited using crystalline powder grown by vertical Bridgman-Stockbarger technique. The deposition process was carried out by means of e-beam evaporation on the well-cleaned soda lime glass substrates and keeping them at the substrate temperature of 200 degrees C. The structural, optical and electrical properties of ternary ZTSe thin films were investigated depending on the annealing temperature at 250 and 300 degrees C. X-ray diffraction analysis showed that as-grown films were in amorphous structure, however annealing at 250 degrees C triggered the crystallization on the preferred ternary structure and annealing at 300 degrees C resulted in the changes from amorphous to the polycrystalline structure. Using the compositional analysis, the detail information about the stoichiometry and the segregation mechanisms of the constituent elements in the structure were determined for both as-grown and annealed samples. In addition, they were morphologically characterized using scanning electron microscopy technique. The electrical properties were analyzed using temperature dependent dark- and photo-conductivity measurements. From the variation of electrical conductivity as a function of the ambient temperature, the current transport mechanisms and corresponding activation energies at specific temperature intervals for each sample were determined. The optical properties for the ZTSe thin films were studied depending on the structural changes with annealing.
Citation Count: 21
Determination of current transport characteristics in Au-Cu/CuO/n-Si Schottky diodes
(Elsevier, 2019) Surucu, O. Bayrakli; Gullu, H. H.; Terlemezoglu, M.; Yildiz, D. E.; Parlak, M.; Electrical-Electronics Engineering; Department of Electrical & Electronics Engineering
In this study, the material properties of CuO thin films fabricated by sputtering technique and electrical properties of CuO/n-Si structure were reported. Temperature-dependent current-voltage (I-V) measurement was carried out to determine the detail electrical characteristics of this structure. The anomaly in thermionic emission (TE) model related to barrier height inhomogeneity at the interface was obtained from the forward bias I-V analysis. The current transport mechanism at the junction was determined under the assumption of TE with Gaussian distribution of barrier height. In this analysis, standard deviation and mean zero bias barrier height were evaluated as 0.176 and 1.48 eV, respectively. Depending on the change in the diode parameters with temperature, Richardson constant was recalculated as 110.20 Acm(-2)K(-2) with the help of modified Richardson plot. In addition, density of states at the interface were determined by using the forward bias I-V results.
Citation Count: 3
DFT Insights into Noble Gold-Based Compound Li5AuP2: Effect of Pressure on Physical Properties
(Amer Chemical Soc, 2023) Surucu, Gokhan; Gencer, Aysenur; Surucu, Ozge; Ali, Md. Ashraf; Electrical-Electronics Engineering
In this study, the Li5AuP2 compound is investigated in detail due to the unique chemical properties of gold that are different from other metals. Pressure is applied to the compound from 0 to 25 GPa to reveal its structural, mechanical, electronic, and dynamical properties using density functional theory (DFT). Within this pressure range, the compound is optimized with a tetragonal crystal structure, making it mechanically and dynam-ically stable above 18 GPa and resulting in an increment of bulk, shear, and Young's moduli of Li5AuP2. Pressure application, furthermore, changes the brittle or ductile nature of the compound. The anisotropic elastic and sound wave velocities are visualized in three dimensions. The thermal properties of the Li5AuP2 compound are obtained, including enthalpy, free energy, entropy x T, heat capacity, and Debye temperature. The electronic properties of the Li5AuP2 compound are studied using the Perdew-Burke-Ernzerhof (PBE) and Heyd-Scuseria-Ernzerhof (HSE) functionals. The pressure increment is found to result in higher band gap values. The Mulliken and bond overlap populations are also determined to reveal the chemical nature of this compound. The optical properties, such as dielectric functions, refractive index, and energy loss function of the Li5AuP2 compound, are established in detail. To our knowledge, this is the first attempt to study this compound in such detail, thus, making the results obtained here beneficial for future studies related to the chemistry of gold.
Citation Count: 20
Enhanced hydrogen storage of a functional material: Hf₂CF₂ MXene with Li decoration
(Elsevier, 2021) Gencer, Aysenur; Aydin, Sezgin; Surucu, Ozge; Wang, Xiaotian; Deligoz, Engin; Surucu, Gokhan; Electrical-Electronics Engineering
In this paper, the hydrogen storage properties of the Li-decorated stable Hf2CF2 MXene layer, obtained by the exfoliation of Al from Hf2AlC and F-termination, are considered by using first-principles calculations based on Density Functional Theory. First, the stability characteristics of the host structure (Hf2CF2 layer) are examined by investigating bulk Hf2AlC. To enhance the adsorbed number of H-2 molecules, the well-defined initial H-2 coordinates are constructed by CLICH (Cap-Like Initial Conditions for Hydrogens) and Monte Carlo-based algorithms. After the geometry optimizations of the designed H-2 systems on the Li/Hf2CF2 layer, the adsorption energies of nH(2)/Li/Hf2CF2 n = 1-10, 15, 20 and 25 systems are calculated, and the suitable values (0.2-0.6 eV/H-2) are obtained up to 15H(2). For n = 20 and 25 systems, which have adsorption energies of 0.15 eV/H-2 and 0.16 eV/H-2, respectively. The structural properties and adsorption geometries of these molecules are analyzed. Additionally, the partial density of the states, electron density difference maps, and Mulliken atomic charges are presented to identify the actual binding mechanism of the systems. The results reveal that the Li-decorated Hf2CF2 MXene layer can be preferred for the hydrogen storage applications due to its stable nature and the convenient adsorption characteristics.
Citation Count: 25
Equiatomic quaternary Heusler compounds TiVFeZ (Z=Al, Si, Ge): Half-metallic ferromagnetic materials
(Elsevier Science Sa, 2021) Gencer, A.; Surucu, O.; Usanmaz, D.; Khenata, R.; Candan, A.; Surucu, G.; Electrical-Electronics Engineering
Equiatomic quaternary Heusler compounds (EQHCs) are very promising materials for spintronic applications due to their excellent electronic and magnetic properties. In this study, structural, electronic, magnetic, mechanic, and dynamic properties of TiVFeZ (Z=Al, Si, Ge) EQHCs are investigated. Three nonequivalent structural configurations of alpha, beta, and gamma type structures are considered. The gamma is defined as the most stable phase for all these compounds and has a half-metallic character. The predicted Curie temperatures of TiVFeAl, TiVFeSi, and TiVFeGe compounds are about 488 K, 256 K, and 306 K, respectively. We also show that TiVFeZ (Z=Al, Si, Ge) have thermodynamic, dynamic, and mechanical stabilities. The presented results reveal that these compounds are potential materials for spintronics applications. (C) 2021 Elsevier B.V. All rights reserved.
Citation Count: 0
Establishing the NiMo₆Se₈ Chevrel Phase as a Promising Material Using DFT
(Wiley-v C H verlag Gmbh, 2024) Surucu, Gokhan; Surucu, Ozge; Usanmaz, Demet; Oezel, Faruk; Gencer, Aysenur; Electrical-Electronics Engineering
In this study, the NiMo6Se8 Chevrel phase is analyzed using Density Functional Theory (DFT) and the Vienna Ab-initio Simulation Package (VASP). The analysis focuses on the phase's structural, electrical, and mechanical characteristics to fill gaps in the current literature. The presence of a rhombohedral crystal structure confirms its thermodynamic stability, as indicated by a negative formation enthalpy, which suggests that it can be synthesized under favorable conditions. The electronic properties of the phase are analyzed, indicating that it exhibits semiconductor characteristics with a bandgap of 1.07 eV. This makes it appropriate for various technological applications. The estimated elastic constants provide an indication of mechanical strength and flexibility, with a noticeable presence of anisotropic elasticity. The confirmation of dynamical stability is achieved by analyzing the phonon dispersion curve, which reveals the absence of any negative frequencies. Furthermore, the material has a low thermal conductivity, increasing its suitability for thermoelectric applications. The analysis emphasizes the versatile capabilities of the NiMo6Se8 Chevrel phase, especially in thermoelectric and energy storage applications, showcasing its promising potential for future technological implementation.
Citation Count: 0
Exploring Temperature-Dependent bandgap and Urbach energies in CdTe thin films for optoelectronic applications
(Elsevier, 2024) Surucu, O.; Surucu, G.; Gasanly, N. M.; Parlak, M.; Isik, M.; Electrical-Electronics Engineering; Department of Electrical & Electronics Engineering
This study examines CdTe thin films deposited via RF magnetron sputtering, focusing on structural and optical properties. X-ray diffraction, Raman spectroscopy, and SEM assessed structural characteristics. Optical properties were analyzed through transmittance measurements from 10 to 300 K. Tauc plots and Varshni modeling revealed a temperature-dependent bandgap, increasing from 1.49 eV at room temperature to 1.57 eV at 10 K. Urbach energy rose from 82.7 to 93.7 meV with temperature. These results are essential for applications where temperature affects CdTe-based device performance.
Citation Count: 22
Frequency effect on electrical and dielectric characteristics of HfO₂-interlayered Si-based Schottky barrier diode
(Springer, 2020) Gullu, H. H.; Yildiz, D. E.; Surucu, O.; Parlak, M.; Electrical-Electronics Engineering; Department of Electrical & Electronics Engineering
This study reveals the electrical properties of In/HfO2/n-Si structure with atomic layer-deposited interfacial oxide layer, HfO2 thin film between In top metal contact and monocrystalline Si wafer substrate. From the dark current-voltage measurements, the diode structure showed good rectifying behavior and low saturation current of about two order of magnitude and 1.2 x 10(- 9) A, respectively. According to the conventional thermionic emission model, zero-bias barrier height and ideality factor were calculated from the forward bias current-voltage curve at room temperature under dark conditions as 0.79 eV and 4.22 eV, respectively. In order to get detailed information about density of interface states and series resistance of this structure, capacitance-voltage and conductance-voltage measurements in the frequency range of 10-1000 kHz were performed. As a result, a decreasing capacitance profile with increasing frequency was obtained. In addition, peak-like behavior in the capacitance profiles was observed and these were found to be the indication of density of states. Further analysis was performed on the evaluation of density of interface states values and these values were calculated by using two different methods: Hill-Coleman and high-low frequency capacitance. These profiles were also analyzed by eliminating the effect of series resistance values on the measured capacitance and conductance; then the values of corrected capacitance and conductance as a function of applied voltage were discussed. Based on these analyses on the capacitive characteristics of the diode, dielectric constant, dielectric loss, loss tangent, electrical conductivity, and the real and imaginary part of electric modulus were investigated for complete understanding on the diode characteristics.
Citation Count: 14
Frequency effect on electrical and dielectric characteristics of In/Cu₂ZnSnTe₄/Si/Ag diode structure
(Springer, 2019) Gullu, H. H.; Surucu, O. Bayrakli; Terlemezoglu, M.; Yildiz, D. E.; Parlak, M.; Electrical-Electronics Engineering; Department of Electrical & Electronics Engineering
In/Cu2ZnSnTe4/Si/Ag diode structure was fabricated by sputtering Cu2ZnSnTe4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance measurements were carried out to obtain detailed information of its electrical characteristics. Admittance spectra of the diode exhibited strong frequency dependence and the obtained values showed decreasing behavior with the increase in the applied frequency. The effect of interfacial film layer with series resistance values and density of interface states were investigated by taking into consideration of non-ideal electrical characteristics of the diode. The distribution profile of the interface states was extracted by Hill-Coleman and high-low frequency capacitance methods. As a function of frequency, they were in proportionality with the inverse of applied frequency. Dielectric constant and dielectric loss parameters were calculated from the maximum value of the diode capacitance at the strong accumulation region. The loss tangent showed a characteristic peak behavior at each frequency. Based on the time-dependent response of the interfacial charges to the applied ac field, the values of ac electrical conductivity and complex electric modulus were calculated and discussed as a function of frequency and bias voltage.
Citation Count: 4
Growth and optical characterization of Sn_0.6Sb_0.4Se layer single crystals for optoelectronic applications
(Elsevier Sci Ltd, 2022) Bektas, T.; Terlemezoglu, M.; Surucu, O.; Isik, M.; Parlak, M.; Electrical-Electronics Engineering; Department of Electrical & Electronics Engineering
SnSe compound is an attractive semiconductor material due to its usage in photovoltaic applications. The sub-stitution of Sb in the SnSe compound presents a remarkable advantage especially in point of tuning optical characteristics. The present paper reports the structural and optical properties of Sn1-xSbxSe (x = 0.4) layered single crystals grown by the vertical Bridgman method. To the best of our knowledge, this work is the first investigation of the Sn0.6Sb0.4Se crystal grown with the vertical Bridgman technique. X-ray diffraction (XRD) pattern of the grown crystal indicated the well crystalline structure of the grown crystals. Lattice strain and interplanar spacing of the crystal structure were determined using the XRD pattern. Scanning electron micro-scope images allowed to the observation of the layer crystal structure. The layer crystalline structure shows 2D material properties and provides 2D applications. Optical properties were revealed by carrying out Raman, ellipsometry and transmission measurements. Raman modes, refractive index, extinction coefficient, and dielectric spectra, band gap energy of the crystal were presented throughout the paper. The obtained results indicated that Sn1-xSbxSe (x = 0.4) layer single crystals may be an alternative potential for photovoltaic and optoelectronic applications.
Citation Count: 28
Illumination and voltage effects on the forward and reverse bias current-voltage (I-V) characteristics in In/In₂S₃/p-Si photodiodes
(Springer, 2021) Yukselturk, Esra; Surucu, Ozge; Terlemezoglu, Makbule; Parlak, Mehmet; Altindal, Semsettin; Electrical-Electronics Engineering
The illumination and voltage effects on the I-V measurements of the fabricated In/In2S3/p-Si photodiode were investigated in dark and under various illumination intensities (20-100 mW/cm(2)) between +/- 2 V. Two linear regions in the forward-bias ln(I)-V plots were observed. The value of diode ideality factor (n) had an increasing trend with increasing illumination intensity while the barrier height (phi(Bo)) had a decreasing trend due to the increase of photocurrent. The photodiode properties were also investigated, and the value of linear-dynamic value range (LDR) was found to be 20.56 dB. The photoresponse (I-ph/I-dark), the photoresponsivity (R), and specific detectivity (D*) of the photodiode were calculated as a function of the illumination. The open-circuit voltage (V-oc) and short-current (I-sc) were found to be 0.36 V and 2.87 mA under 100 mW.cm(-2) illumination intensity, respectively. The possible conduction mechanisms (CMs) were investigated using the forward ln(I)-V and reverse ln(I)-V-0.5 plots. The energy-dependent surface states (N-ss) profile was extracted from the positive I-V data by considering voltage-dependent barrier height (BH) and ideality factor (n) in dark and illumination at 100 mW/cm(2).
Citation Count: 0
Innovative 2D materials for efficient photocatalysis: A comparative study for WSi2N4, WGe2N4, and their janus counterpart WSiGeN4 monolayers
(Pergamon-elsevier Science Ltd, 2024) Himmet, F.; Surucu, G.; Lisesivdin, S. B.; Surucu, O.; Altuntas, G.; Bostan, B.; Gencer, A.; Electrical-Electronics Engineering
In pursuit of environmentally friendly and effective photocatalytic materials for water splitting, this research paper presents a thorough evaluation of WSi2N4, WGe2N4, and their Janus counterpart WSiGeN4 monolayers through the application of Density Functional Theory. The study elucidates the optical, electronic, and structural characteristics of these monolayers, thereby demonstrating their potential as highly favorable contenders for applications involving photocatalytic water splitting. By means of comprehensive optimization and analysis, it is shown that these monolayers possess advantageous characteristics, such as favorable band gaps, stable work functions, and stability over a broad pH range. These attributes are of utmost importance in ensuring the effectiveness of hydrogen evolution reaction (HER). The inclusion of Janus WSiGeN4, which possesses an intrinsic mirror asymmetry, significantly improves the photocatalytic efficacy of the material. This is achieved by meeting the demands of optimal redox reaction levels in both the conduction and valence bands. In conjunction with machine learning force fields, ab initio molecular dynamics (AIMD) simulations validate the thermal stability of these monolayers at 300 K. In addition, our analysis of the optical properties reveals substantial absorption in the visible spectrum - vital for photocatalytic applications powered by solar energy. In summary, the research highlights the potential of Janus WSiGeN4, WGe2N4, and WSi2N4 monolayers as multifunctional and effective substances for forthcoming photocatalytic water -splitting systems. This advancement indicates of a significant stride in the direction of sustainable energy solution development.
Citation Count: 10
Investigation of band gap energy versus temperature for SnS 2 thin films grown by RF-magnetron sputtering
(Elsevier, 2020) Isik, M.; Gullu, H. H.; Terlemezoglu, M.; Surucu, O. Bayrakli; Parlak, M.; Gasanly, N. M.; Electrical-Electronics Engineering; Department of Electrical & Electronics Engineering
[No Abstract Available]
Citation Count: 10
Investigation of carrier transport mechanisms in the Cu-Zn-Se based hetero-structure grown by sputtering technique
(Canadian Science Publishing, 2018) Gullu, H. H.; Terlemezoglu, M.; Bayrakli, O.; Yildiz, D. E.; Parlak, M.; Electrical-Electronics Engineering; Department of Electrical & Electronics Engineering
In this paper, we present results of the electrical characterization of n-Si/p-Cu-Zn-Se hetero-structure. Sputtered film was found in Se-rich behavior with tetragonal polycrystalline nature along with (112) preferred orientation. The band gap energy for direct optical transitions was obtained as 2.65 eV. The results of the conductivity measurements indicated p-type behavior and carrier transport mechanism was modelled according to thermionic emission theory. Detailed electrical characterization of this structure was carried out with the help of temperature-dependent current-voltage measurements in the temperature range of 220-360 K, room temperature, and frequency-dependent capacitance-voltage and conductance-voltage measurements. The anomaly in current-voltage characteristics was related to barrier height inhomogeneity at the interface and modified by the assumption of Gaussian distribution of barrier height, in which mean barrier height and standard deviation at zero bias were found as 2.11 and 0.24 eV, respectively. Moreover, Richardson constant value was determined as 141.95 Acm(-2)K(-2) by means of modified Richardson plot.
Citation Count: 11
Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure
(Springer, 2019) Gullu, H. H.; Surucu, O. Bayrakli; Terlemezoglu, M.; Yildiz, D. E.; Parlak, M.; Electrical-Electronics Engineering; Department of Electrical & Electronics Engineering
In this study, temperature-dependent current-voltage (I-V), frequency-dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements are carried out for the electrical characterization of a zinc oxide (ZnO) thin film-based diode. The sandwich structure in the form of Ag/ZnO/Si/Al is investigated at temperatures between 220 and 360 K and in the frequency region of 1 kHz-1 MHz. ZnO thin film layer is deposited on a p-Si wafer substrate as a transparent conductive oxide layer by taking into consideration possible electronic applications with intrinsic attractive material properties. At each temperature step, the I-V curves showed about two orders of magnitude rectifying behavior and, according to the Schottky diode relation, the saturation current, zero-bias barrier height and ideality factor were extracted as a function of the temperature. In the case of non-ideal diode characteristics due to the inhomogeneties in the diode as observed from the characteristics of the calculated parameters, effective barrier height values are evaluated. In addition, based on the existence of the interface layer, density of interface states in the band gap region and parasitic resistances were determined by the capacitance measurements.
Citation Count: 17
The investigation of electronic, anisotropic elastic and lattice dynamical properties of MAB phase nanolaminated ternary borides: M 2 AlB 2 ( M = Mn , Fe and Co ) under spin effects
(Elsevier Science Sa, 2020) Surucu, Gokhan; Yildiz, Bugra; Erkisi, Aytac; Wang, Xiaotian; Surucu, Ozge; Electrical-Electronics Engineering
[No Abstract Available]